中華人民共和國國家標準(中國大陸GB標準)英文版 |
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GB標準是中華人民共和國國家標準，也叫GB國標，是中國大陸強制執行的國家標準，所有中國大陸境內銷售的商品及提供服務都必須符合GB國家標準的要求，包括進口商品及服務； 本網站提供GB國家標準的查詢檢索，英文版翻譯，GB標準產品檢測檢驗及合規性分析服務； |
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GY/T 105-1992 广播发射机或广播发射机系统实时监控接口标准(附条文说明)（中英文版） Interface specifications for real-time monitoring of broadcasting transmitter or broadcasting transmitter system |
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SJ 20165-1992 电子管 ｊ４０５γ型辐射计数管详细规范（中英文版） Electron tube Detail specification for radiation counter tubes of types J405γ |
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SJ 20224-1992 印制线路板用阻燃型覆铜箔环氧玻璃布层压板详细规范（中英文版） Detail specification for epoxide woven glass fabric copper-clad laminated sheets of flammability resistance for printed wiring boards |
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SJ 20296-1993 半导体集成电路ｊｆ２５００、ｊｆ２５２０型高转换速率运算放大器详细规范（中英文版） Detail specification for type JF2500 and JF2520 high slew rate operational amplifiers of semiconductor integrated circuits |
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SJ 20175-1992 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范（中英文版） Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 |
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SJ 20176-1992 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范（中英文版） Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 |
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SJ 20164-1992 电子管 ｊ３０５βγ型辐射计数管详细规范（中英文版） Electron tube Detail specification for radiation counter tubes of types J305βγ |
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SJ 20174-1992 半导体分立器件 ３ｄｋ２２２１（２２２１ａ、２２２２、２２２２ａ）型ｎｐｎ硅小功率开关晶体管详细规范（中英文版） Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A |
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SJ 20173-1992 半导体分立器件 ３ｄｋ２２１８（２２１８ａ、２２１９、２２１９ａ）型ｎｐｎ硅小功率开关晶体管详细规范（中英文版） Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A |
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SJ 20167-1992 电子管sf—1403型硅增强靶摄像管详细规范（中英文版） Electron tube Detail specification for silicon-intensifier tartget camera tube of type SF-1403 |
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SJ 20166-1992 电子管sf—1213型硫化锑视像管详细规范（中英文版） Electron tube Detail specification for antimony Sulfide Vidicon of type SF-1213 |
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SJ 20060-1992 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范（中英文版） Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 |
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SJ 20184-1992 半导体分立器件 ｃｓ３８２１、３８２２、３８２３型场效应晶体管详细规范（中英文版） Semiconductor discrete device Detail specification for field-effect transistor of types CS3821, 3822, 3823 |
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SJ 20054-1992 半导体分立器件 ３ｄｋ１０１型ｎｐｎ硅小功率开关晶体管详细规范（中英文版） Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK101 |
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SJ 20055-1992 半导体分立器件 ３ｄｋ１０２型ｎｐｎ硅小功率开关晶体管详细规范（中英文版） Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK102 |
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SJ 20056-1992 半导体分立器件 ３ｄｋ１０３型ｎｐｎ硅小功率开关晶体管详细规范（中英文版） Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK103 |
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SJ 20057-1992 半导体分立器件 ３ｄｋ１０４型ｎｐｎ硅小功率开关晶体管详细规范（中英文版） Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 |
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SJ 20059-1992 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范（中英文版） Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 |
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SJ 20061-1992 半导体分立器件 ｃｓ１４６型硅ｎ沟道耗尽型场效应晶体管详细规范（中英文版） Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146 |
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SJ 20062-1992 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范（中英文版） Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 |
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